How to Tackle the Challenges of Migrating an IGBT Based Drive Inverter to SiC MOSFETs

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How to Tackle the Challenges of Migrating an IGBT Based Drive Inverter to SiC MOSFETs

Presented by Toshiba Corporation

Using IGBT in Inverter Application is common practice since many years. All of these solutions have the disadvantage that the resulting systems are quite heavy and big and are getting hot during operation under load. To overcome these issues a replacement of the IGBTs by SiC MOSFETs is a proper solution.

During the presentation the benefits of SiC MOSFETs in contrast to IGBTs and their influence on the design and implementation of an inverter will be explained using a ready to use inverter as example.

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Matthias Ortmann

Chief Engineer, Application Support, Semiconductor Marketing, Toshiba Electronics Europe GmbH

Dr Matthias Ortmann, Chief Engineer, Application Support, Semiconductor Marketing joined Toshiba Electronics Europe 17 years ago. During this time, he gained vast experience in application engineering and supporting various product families under the Toshiba brand including optical devices, MOS and SiC FETs, instrument cluster devices, ADAS, audio amplifier and interface devices. Before he joined Toshiba, Dr Ortmann worked at Behringer – Special Studio Equipment as Hardware Developer and Supervisor Hardware Engineering.